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CQDD-12M CQDD-12N SURFACE MOUNT 12 AMP SILICON TRIAC 600 THRU 800 VOLTS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-12M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER
D2PAK CASE
MAXIMUM RATINGS: (TC=25C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=90C) Peak One Cycle Surge, t=8.3ms I2t Value for Fusing, t=8.3ms Peak Gate Power, tp=10s Average Gate Power Dissipation Peak Gate Current, tp=10s Peak Gate Voltage, tp=10s Critical Rate of Rise of On-State Current Repetitive, f=60Hz Operating Junction Temperature Storage Temperature Thermal Resistance Thermal Resistance
SYMBOL VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM di/dt TJ Tstg JA JC
CQDD-12M 600 12 80 27 40
CQDD-12N UNITS 800 V A A A2s W W A V A/s C C C/W C/W
1.0 4.0 16 10 -40 to +125 -40 to +150 60 2.7
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VGT VTM dv/dt Rated VDRM Rated VDRM, TC=125C VD=12V, RL=10, QUAD I, II, III VD=12V, RL=10, QUAD IV IT=100mA VD=12V, RL=10, QUAD I, II, III VD=12V, RL=10, QUAD IV ITM=17A, tp=380s VD=2 /3 VDRM, RGK=, TC=125C 10
TYP
MAX 10 500
UNITS A A mA mA mA V V V V/s
9.9 24.3 14.1 1.10 2.10 1.33
20 50 25 1.50 2.50 1.50
R2 (12-February 2010)
CQDD-12M CQDD-12N SURFACE MOUNT 12 AMP SILICON TRIAC 600 THRU 800 VOLTS D2PAK CASE - MECHANICAL OUTLINE
LEAD CODE: 1) MT1 2) MT2 3) Gate 4) MT2 MARKING: FULL PART NUMBER
R2 (12-February 2010)
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